BF245C,112 datasheet

Маркировка

BF245C,112
Производитель

NXP Semiconductors
Описание

NXP Semiconductors BF245C,112 Configuration: Single Continuous Drain Current: 25 mA Current - Test: - Current Rating: 25mA Drain Current (idss At Vgs=0): 12 mA to 25 mA Drain Source Voltage Vds: 30 V Frequency: 100MHz Gain: - Gate-source Breakdown Voltage: - 30 V Gate-source Cutoff Voltage: - 0.25 V to - 8 V ID_COMPONENTS: 1949146 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Drain Gate Voltage: - 30 V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: Through Hole Noise Figure: 1.5dB Package / Case: TO-92-3 (Standard Body), TO-226 Power - Output: - Power Dissipation: 300 mW Series: - Transistor Polarity: N-Channel Transistor Type: N-Channel JFET Voltage - Test: 15V Other Names: 933106600112::BF245CP::BF245CP
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13 шт.
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